Site Selective Integration of III-V Materials on Si for Nanoscale Logic and Photonic Devices
Identifieur interne : 001552 ( Main/Repository ); précédent : 001551; suivant : 001553Site Selective Integration of III-V Materials on Si for Nanoscale Logic and Photonic Devices
Auteurs : RBID : Pascal:12-0408756Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Integrating high electron mobility III-V materials on an existing Si based CMOS processing platform is considered as a main stepping stone to increase the CMOS performance and continue the scaling trend. Owing to the polar nature of III-V materials versus the nonpolar nature of Si, antiphase boundaries (APBs) arise in epitaxially grown III- V materials on Si. Here, we demonstrate an approach to restrict the generation of APBs by selectively depositing a III- V material in narrow Si-trenches as formed within the shallow trench isolation (STI) patterned Si(001) wafers. Based on the detailed crystal structures of Si and III-V materials, a concept has been developed comprising the deposition in "v-grooves" with {111} facets in the Si wafer. The grooves are formed by anisotropic wet etching of Si. When InP is deposited selectively into these "v-grooves", the crystallographic alignment between the Si and InP restricts the APBs nucleation to the comers of the "v-grooved" trench. This approach offers a promising method of large-scale integration of III-V materials on Si as required for the fabrication of novel logic and photonic devices.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 001711
Links to Exploration step
Pascal:12-0408756Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Site Selective Integration of III-V Materials on Si for Nanoscale Logic and Photonic Devices</title><author><name sortKey="Paladugu, Mohanchand" uniqKey="Paladugu M">Mohanchand Paladugu</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Merckling, Clement" uniqKey="Merckling C">Clement Merckling</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Loo, Roger" uniqKey="Loo R">Roger Loo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Richard, Olivier" uniqKey="Richard O">Olivier Richard</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Bender, Hugo" uniqKey="Bender H">Hugo Bender</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Dekoster, Johan" uniqKey="Dekoster J">Johan Dekoster</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Vandervorst, Wilfried" uniqKey="Vandervorst W">Wilfried Vandervorst</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Astronomy and Physics, KU Leuven</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>7 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Caymax, Matty" uniqKey="Caymax M">Matty Caymax</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author><author><name sortKey="Heyns, Marc" uniqKey="Heyns M">Marc Heyns</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Belgique</country><wicri:noRegion>Leuven 3001</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0408756</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0408756 INIST</idno><idno type="RBID">Pascal:12-0408756</idno><idno type="wicri:Area/Main/Corpus">001711</idno><idno type="wicri:Area/Main/Repository">001552</idno></publicationStmt><seriesStmt><idno type="ISSN">1528-7483</idno><title level="j" type="abbreviated">Cryst. growth des.</title><title level="j" type="main">Crystal growth & design</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term><term>Crystalline structure</term><term>Electron mobility</term><term>Engraving</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Large scale integration</term><term>Logic devices</term><term>Nanoelectronics</term><term>Nanophotonics</term><term>Nucleation</term><term>Photonic device</term><term>Scaling law</term><term>Silicon</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Nanophotonique</term><term>Dispositif logique</term><term>Mobilité électron</term><term>Loi échelle</term><term>Structure cristalline</term><term>Anisotropie</term><term>Gravure</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Nucléation</term><term>Intégration LSI</term><term>Nanoélectronique</term><term>Silicium</term><term>Phosphure d'indium</term><term>Substrat silicium</term><term>Si</term><term>InP</term><term>8535</term><term>Dispositif photonique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Integrating high electron mobility III-V materials on an existing Si based CMOS processing platform is considered as a main stepping stone to increase the CMOS performance and continue the scaling trend. Owing to the polar nature of III-V materials versus the nonpolar nature of Si, antiphase boundaries (APBs) arise in epitaxially grown III- V materials on Si. Here, we demonstrate an approach to restrict the generation of APBs by selectively depositing a III- V material in narrow Si-trenches as formed within the shallow trench isolation (STI) patterned Si(001) wafers. Based on the detailed crystal structures of Si and III-V materials, a concept has been developed comprising the deposition in "v-grooves" with {111} facets in the Si wafer. The grooves are formed by anisotropic wet etching of Si. When InP is deposited selectively into these "v-grooves", the crystallographic alignment between the Si and InP restricts the APBs nucleation to the comers of the "v-grooved" trench. This approach offers a promising method of large-scale integration of III-V materials on Si as required for the fabrication of novel logic and photonic devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1528-7483</s0></fA01><fA03 i2="1"><s0>Cryst. growth des.</s0></fA03><fA05><s2>12</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Site Selective Integration of III-V Materials on Si for Nanoscale Logic and Photonic Devices</s1></fA08><fA11 i1="01" i2="1"><s1>PALADUGU (Mohanchand)</s1></fA11><fA11 i1="02" i2="1"><s1>MERCKLING (Clement)</s1></fA11><fA11 i1="03" i2="1"><s1>LOO (Roger)</s1></fA11><fA11 i1="04" i2="1"><s1>RICHARD (Olivier)</s1></fA11><fA11 i1="05" i2="1"><s1>BENDER (Hugo)</s1></fA11><fA11 i1="06" i2="1"><s1>DEKOSTER (Johan)</s1></fA11><fA11 i1="07" i2="1"><s1>VANDERVORST (Wilfried)</s1></fA11><fA11 i1="08" i2="1"><s1>CAYMAX (Matty)</s1></fA11><fA11 i1="09" i2="1"><s1>HEYNS (Marc)</s1></fA11><fA14 i1="01"><s1>IMEC, Kapeldreef 75</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Metallurgy and Materials Engineering, KU Leuven, Kasteelpark Arenberg 44</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>1 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>Department of Astronomy and Physics, KU Leuven</s1><s2>Leuven 3001</s2><s3>BEL</s3><sZ>7 aut.</sZ></fA14><fA20><s1>4696-4702</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>27261</s2><s5>354000509545450030</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>42 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0408756</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Crystal growth & design</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Integrating high electron mobility III-V materials on an existing Si based CMOS processing platform is considered as a main stepping stone to increase the CMOS performance and continue the scaling trend. Owing to the polar nature of III-V materials versus the nonpolar nature of Si, antiphase boundaries (APBs) arise in epitaxially grown III- V materials on Si. Here, we demonstrate an approach to restrict the generation of APBs by selectively depositing a III- V material in narrow Si-trenches as formed within the shallow trench isolation (STI) patterned Si(001) wafers. Based on the detailed crystal structures of Si and III-V materials, a concept has been developed comprising the deposition in "v-grooves" with {111} facets in the Si wafer. The grooves are formed by anisotropic wet etching of Si. When InP is deposited selectively into these "v-grooves", the crystallographic alignment between the Si and InP restricts the APBs nucleation to the comers of the "v-grooved" trench. This approach offers a promising method of large-scale integration of III-V materials on Si as required for the fabrication of novel logic and photonic devices.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F18</s0></fC02><fC02 i1="02" i2="X"><s0>001D03C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Nanophotonique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Nanophotonics</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Nanofotónica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Dispositif logique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Logic devices</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Mobilité électron</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Electron mobility</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Movilidad electrón</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Loi échelle</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Scaling law</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Ley escala</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Structure cristalline</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Crystalline structure</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Estructura cristalina</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Anisotropie</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Anisotropy</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Anisotropía</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Gravure</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Engraving</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Grabado</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Composé III-V</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>III-V compound</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Nucléation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Nucleation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Nucleación</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Intégration LSI</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Large scale integration</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Nanoélectronique</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Nanoelectronics</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Nanoelectrónica</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Silicium</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Silicon</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Silicio</s0><s2>NC</s2><s5>15</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>16</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>16</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>16</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Substrat silicium</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Si</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>8535</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Dispositif photonique</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Photonic device</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Dispositivo fotónico</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>317</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001552 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 001552 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:12-0408756
|texte= Site Selective Integration of III-V Materials on Si for Nanoscale Logic and Photonic Devices
}}
| This area was generated with Dilib version V0.5.77. |  |